The authors present the optimum design and fabrication of the overlapped LDD (lightly doped drain) NMOS transistor. They use simulation to clarify the internal state of the overlapped LDD transistor under operation, evaluate the improved electrical characteristics of devices fabricated by rotational oblique N- implantation, and show that the optimum design overlapped LDD can surpass the conventional LDD in device characteristics and circuit speed. They also show that oblique implantation is a promising method for forming the gate/N- overlapped structures due to the simple control of the N- region in terms of implantation angle and energy.
|ジャーナル||Digest of Technical Papers - Symposium on VLSI Technology|
|出版ステータス||Published - 1989 12月 1|
|イベント||Ninth Symposium on VLSI Technology 1989 - Digest of Technical Papers - Kyoto, Jpn|
継続期間: 1989 5月 22 → 1989 5月 25
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