Optimum design of gate/N- overlapped LDD transistor

M. Inuishi*, K. Mitsui, S. Komori, M. Shimizu, H. Oda, J. Mitsuhashi, K. Tsukamoto

*この研究の対応する著者

研究成果: Conference article査読

11 被引用数 (Scopus)

抄録

The authors present the optimum design and fabrication of the overlapped LDD (lightly doped drain) NMOS transistor. They use simulation to clarify the internal state of the overlapped LDD transistor under operation, evaluate the improved electrical characteristics of devices fabricated by rotational oblique N- implantation, and show that the optimum design overlapped LDD can surpass the conventional LDD in device characteristics and circuit speed. They also show that oblique implantation is a promising method for forming the gate/N- overlapped structures due to the simple control of the N- region in terms of implantation angle and energy.

本文言語English
ページ(範囲)33-34
ページ数2
ジャーナルDigest of Technical Papers - Symposium on VLSI Technology
出版ステータスPublished - 1989 12 1
外部発表はい
イベントNinth Symposium on VLSI Technology 1989 - Digest of Technical Papers - Kyoto, Jpn
継続期間: 1989 5 221989 5 25

ASJC Scopus subject areas

  • 電子工学および電気工学

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