Ordered structure in the thermal oxide layer on silicon substrates

T. Shimura*, E. Mishima, H. Watanabe, K. Yasutake, M. Umeno, K. Tatsumura, T. Watanabe, I. Ohdomari, K. Yamada, S. Kamiyama, Y. Akasaka, Y. Nara, K. Nakamura

*この研究の対応する著者

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

Recent progress in understanding the ordered structure in the thermal oxide layer on Si substrates is presented together with a brief review. Large-scale atomistic simulation of the silicon oxidation process shows that the ordered structure is due to residual order emanating from the (111) atomic planes in the original crystalline Si. By monitoring the X-ray diffraction peaks from the residual order, the diffusion process of atomic oxygen through the oxide layer as well as the dielectric breakdown mechanism caused by the electrical stress are investigated. The existence of the residual order is also confirmed in the interfacial SiO2 layer between a high-k gate insulator and the Si substrate.

本文言語English
ホスト出版物のタイトルPhysics and Chemistry of SiO2 and the Si-SiO2 Interface-5
出版社Electrochemical Society Inc.
ページ39-48
ページ数10
1
ISBN(電子版)9781607685395
出版ステータスPublished - 2006
イベント5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States
継続期間: 2005 10月 162005 10月 20

出版物シリーズ

名前ECS Transactions
番号1
1
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other5th International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 2005 Fall Meeting of the Electrochemical Society
国/地域United States
CityLos Angeles, CA
Period05/10/1605/10/20

ASJC Scopus subject areas

  • 工学(全般)

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