Organic field-effect-transistor-based memory with nylon 11 as gate dielectric

Heisuke Sakai*, Hayato Isoda, Yukio Furukawa

*この研究の対応する著者

研究成果査読

11 被引用数 (Scopus)

抄録

We present the electrical properties of an organic memory device based on an organic field-effect transistor using a thin film of nylon 11 as a gate dielectric. The transfer characteristics of the memory device showed large hysteresis. A large shift of 37 V in the transfer characteristics was obtained by the application of a writing bias to the gate dielectric. The drain current ratio of the on-state to off-state was ca. 100. The on-state of the memory device showed a clear memory characteristic.

本文言語English
論文番号040210
ジャーナルJapanese journal of applied physics
51
4 PART 1
DOI
出版ステータスPublished - 2012 4

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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