Orientation controlled, micron-sized dot-patterned PZT films were grown by metal organic chemical vapor phase deposition (MOCVD), and their crystal structure was evaluated. A micron-size dot-patterned SrRuO3 (SRO) buffer layer was initially prepared by MOCVD through a metal mask on the (111) Pt/Ti/SiO2/Si substrate. Then, a PZT film was deposited over the entire substrate. Micron-beam X-ray diffraction and Raman spectroscopy indicated that (111)-orientated PZT was prepared on the SRO covered area, while the (100)/(001)-orientated one was directly grown on Pt-covered substrates. The PZT film grown on SRO was thinner than that on the Pt-covered substrate. The estimated ferroelectric property on the center of the dot pattern was larger than that at the circumference by Raman spectroscopy because the strain is accelerated at the center of the dot.
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