Origin of carrier scattering in polycrystalline Al-doped ZnO films

Junjun Jia, Nobuto Oka, Minehide Kusayanagi, Satoshi Nakatomi, Yuzo Shigesato

研究成果: Article査読

25 被引用数 (Scopus)

抄録

We observed the carrier transport phenomena in polycrystalline Al-doped ZnO (AZO) films with carrier densities ranging from 2.0 × 1019 to 1.1 × 1021 cm-3. A comparison of the optical carrier density and Hall carrier density indicates that the conduction band in AZO films is nonparabolic above 2.0 × 1020 cm-3. A transition from grain boundary scattering to ionized impurity scattering is observed at a doping level of >4.0 × 1020 cm-3. The trap density at the grain boundary increases with increasing Al concentration in the films, implying that the doping level plays a decisive role in the trap density. The excellent fitting of the optical mobility and carrier density using the Brooks-Herring model shows that the acceptor concentration increases with increasing doping level.

本文言語English
論文番号105802
ジャーナルApplied Physics Express
7
10
DOI
出版ステータスPublished - 2014 10月 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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