Origin of growth defects in CVD diamond epitaxial films

A. Tallaire, M. Kasu*, K. Ueda, T. Makimoto

*この研究の対応する著者

研究成果: Article査読

46 被引用数 (Scopus)

抄録

Three types of growth defects commonly found epitaxial diamond films grown by chemical vapour deposition (CVD), namely unepitaxial crystals (UCs), hillocks with flat top (FHs) and pyramidal hillocks (PHs), were etched using hydrogen/oxygen plasma to discuss their origin. UCs formed at random locations on the grown layer without any apparent relation with the substrate. Their nucleation might be due to contaminants and their development controlled by the growth conditions in the plasma. In contrast, dislocations formed from impurities segregated at the interface between the substrate and the CVD layer, were found to be the origin of the FHs and the PHs. A simple crystal model that involves micro-faceting or twinning at an intrinsic stacking fault originating from the dislocation core is proposed to explain the formation and the evolution of the growth defects.

本文言語English
ページ(範囲)60-65
ページ数6
ジャーナルDiamond and Related Materials
17
1
DOI
出版ステータスPublished - 2008 1 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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