Over 12000 A/cm2 and 3.2 mΩcm2 Miniaturized Vertical-Type Two-Dimensional Hole Gas Diamond MOSFET

Masayuki Iwataki*, Nobutaka Oi, Kiyotaka Horikawa, Shotaro Amano, Jun Nishimura, Taisuke Kageura, Masafumi Inaba, Atsushi Hiraiwa, Hiroshi Kawarada

*この研究の対応する著者

研究成果査読

10 被引用数 (Scopus)

抄録

We present a miniaturized vertical-type two-dimensional hole gas (2DHG) diamond metal-oxide-semiconductor field-effect transistor (MOSFET) by adopting a gate-source overlapping structure. We developed a 2μm-wide trench and disposed a part of the gate electrode to overlap the Al2O3 insulator film on the source electrode to eliminate the space between source and gate electrode. We obtained the maximum drain current density of ID =12800 A/cm2 at VDS =-50 V and the specific on-resistance of RON =3.2 m}Ω cm2 at VDS =-10 V and confirmed their improvement by the miniaturization of devices and reduction of source to gate resistance. In addition, the drain current on/off ratio was 7 orders magnitude even at 200 °C with the formation of a highly concentrated, thick nitrogen-doped layer as the current blocking layer.

本文言語English
論文番号8902031
ページ(範囲)111-114
ページ数4
ジャーナルIEEE Electron Device Letters
41
1
DOI
出版ステータスPublished - 2020 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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