Over 59 mV pH−1 Sensitivity with Fluorocarbon Thin Film via Fluorine Termination for pH Sensing Using Boron-Doped Diamond Solution-Gate Field-Effect Transistors

Yu Hao Chang, Yutaro Iyama, Kaito Tadenuma, Shuto Kawaguchi, Teruaki Takarada, Shaili Falina, Mohd Syamsul, Hiroshi Kawarada*

*この研究の対応する著者

研究成果: Article査読

抄録

pH sensing facilitates many substantial aspects of the society such as chemical laboratory analysis, agriculture, or water and soil qualities. However, existing pH sensors have problems and limitations such as fragility, hysteresis, or slow responding time. In this research, a new method utilizing fluorocarbon thin film via fluorine termination and boron-doped diamond (BDD) solution-gate field-effect transistors (SGFETs) for pH sensing is developed for the first time. The fluorocarbon film device demonstrates a high pH sensitivity of 67.4 and 34.9 mV pH−1 in acid and alkaline pH regions, respectively.

本文言語English
論文番号2000278
ジャーナルPhysica Status Solidi (A) Applications and Materials Science
218
5
DOI
出版ステータスPublished - 2021 3

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 電子工学および電気工学
  • 材料化学

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