Overview and future challenge of Floating Body Cell (FBC) technology for embedded applications

Akihiro Nitayama, Takashi Ohsawa, Takeshi Hamamoto

研究成果: Conference contribution

6 被引用数 (Scopus)

抄録

A one-transistor memory cell on silicon-on-insulator, called Floating Body Cell (FBC), has been developed for high density embedded DRAM applications. The functionality of a 128Mb FBC DRAM using fully compatible 90nm CMOS technology has been successfully demonstrated. The memory cell design, such as fully-depleted (FD) operation with substrate-bias, and the process integration, such as well and Cu wiring, are reviewed. The scalability and future challenge of FBC technology are discussed as well.

本文言語English
ホスト出版物のタイトル2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers
ページ94-96
ページ数3
DOI
出版ステータスPublished - 2006 12 1
外部発表はい
イベント2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Hsinchu, Taiwan, Province of China
継続期間: 2006 4 242006 4 26

出版物シリーズ

名前International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Other

Other2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA
CountryTaiwan, Province of China
CityHsinchu
Period06/4/2406/4/26

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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