Overview and future challenges of floating body RAM (FBRAM) technology for 32 nm technology node and beyond

Takeshi Hamamoto; Takashi Ohsawa

doi:10.1016/j.sse.2009.03.010

Overview and future challenges of floating body RAM (FBRAM) technology for 32 nm technology node and beyond

Takeshi Hamamoto, Takashi Ohsawa

研究成果: Article › 査読

17 被引用数 (Scopus)

抄録

Floating body cell (FBC) is a one-transistor memory cell on SOI substrate aimed at high-density embedded memory on SOC. In order to verify this memory cell technology, a 128 Mb floating body RAM (FBRAM) with FBC has been designed and successfully developed. The memory cell design and the experimental results, including single-cell operation, are reviewed. Based on the experimental results, the scalability of FBC down to 32 nm technology node is also discussed.

本文言語	English
ページ（範囲）	676-683
ページ数	8
ジャーナル	Solid-State Electronics
巻	53
号	7
DOI	https://doi.org/10.1016/j.sse.2009.03.010
出版ステータス	Published - 2009 7
外部発表	はい

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

文献へのアクセス

10.1016/j.sse.2009.03.010

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引用スタイル

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