Oxidation properties of silicon nitride thin films fabricated by double tubed coaxial line type microwave plasma chemical vapor deposition

Isamu Kato*, Kouji Numada, Yukihiro Kiyota

*この研究の対応する著者

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Silicon nitride films have fabricated under different deposition conditions using a double tubed coaxial line type microwave plasma chemical vapor deposition system. The oxidation and annealing properties of the films have been analyzed using infrared absorption spectroscopy. It is shown that oxidation proceeds via (Si-H2)n bonds in the voids. During the process, hydrogen atoms are released. The N-H bonds which form the remainder in the bulk are not affected by oxidation. Based on this finding, films which have a large concentration of N-H bonds and a lower concentration of Si-H bonds show greater resistance to oxidation. Under adequate conditions, the stoichiometric oxidation-resistant silicon nitride films can be fabricated outside the discharge plasma even at room temperature.

本文言語English
ページ(範囲)1401-1405
ページ数5
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
27
8
出版ステータスPublished - 1988 8

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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