Oxygen adsorption on hydrogen-preadsorbed Si(111)7 × 7 observed by second harmonic generation (SHG)

Ken Nakamura*, Shingo Ichimura, Hazime Shimizu

*この研究の対応する著者

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Oxygen adsorption was in situ observed by second harmonic generation (SHG) on both clean and hydrogen-preadsorbed Si(111)7 × 7. The sticking probability of molecular oxygen was decreased by monohydride formation, although it was not a completely passivating surface. This is a different effect of monohydride from that on Si(111)1 × 1 for passivation. Hydrogen adsorption at room temperature leading to both monohydride and polyhydride formation showed two different stages of sticking probability, with increasing exposure for hydrogen preadsorption, sticking probability was furthermore decreased with oxygen adsorption. This is expected due to the formation of polyhydride species on Si(111)7 × 7 which was found to be necessary for passivating reconstructed Si(111)7 × 7.

本文言語English
ページ(範囲)444-448
ページ数5
ジャーナルApplied Surface Science
100-101
DOI
出版ステータスPublished - 1996 7
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 物理学および天文学(全般)
  • 表面および界面
  • 表面、皮膜および薄膜

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