Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs

Jin Yu Shiu, Jui Chien Huang, Vincent Desmaris, Chia Ta Chang, Chung Yu Lu, Kazuhide Kumakura, Toshiki Makimoto, Herbert Zirath, Niklas Rorsman, Edward Yi Chang

研究成果: Article査読

36 被引用数 (Scopus)

抄録

A multienergy oxygen ion implantation process was demonstrated to be compatible with the processing of high-power microwave AlGaN/GaN high electron mobility transistors (HEMTs). HEMTs that are isolated by this process exhibited gate-lag- and drain-lag-free operation. A maximum output power density of 5.3 W/mm at Vgs = -4 V = Vds=50 and a maximum power added efficiency of 51.5% at V =-4 V Vds=30 at 3 GHz were demonstrated on HEMTs without field plates on sapphire substrate. This isolation process results in planar HEMTs, circumventing potential problems with enhanced gate leakage due to the gate contacting the 2-D electron gas at the mesa sidewall.

本文言語English
ページ(範囲)476-478
ページ数3
ジャーナルIEEE Electron Device Letters
28
6
DOI
出版ステータスPublished - 2007 6
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

フィンガープリント

「Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル