Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current

Qi Wang*, Yaomi Itoh, Tohru Tsuruoka, Masakazu Aono, Deyan He, Tsuyoshi Hasegawa

*この研究の対応する著者

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Three-terminal structures have an advantage over two-terminal structures in logic applications and neuromorphic circuits, However, three-terminal operation based on Valence Change RAM still requires a larger gate bias to form/dissolve a conductive path between the source and the drain, especially for turning off. Here, reduction in gate bias and gate leakage current in nonvolatile operation of oxygen vacancy drift-controlled three-terminal ReRAM is demonstrated by W/Ti (gate)/TaOx (resistance switching layer)/Pt (source), Pt (drain) structure. Introduction of a Ti thin layer between W and TaOx layers prevents a conductive channel formation between gate and source/drain electrodes. Consequently, as-fabricated high resistance between gate and source/drain is kept, resulting in smaller gate leakage current. We also achieved interface engineering on a sidewall structure of Pt (source)/SiO2 (insulator)/Pt (drain) multi-layer, reducing in an operating bias from 10 V to 4 V or less.

本文言語English
ページ(範囲)30-34
ページ数5
ジャーナルSolid State Ionics
328
DOI
出版ステータスPublished - 2018 12月 15

ASJC Scopus subject areas

  • 化学 (全般)
  • 材料科学(全般)
  • 凝縮系物理学

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