Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current

Engineering & Materials Science

• Oxygen vacancies 100%
• RRAM 91%
• Leakage currents 69%
• Random access storage 35%
• Electrodes 24%
• Networks (circuits) 17%

Chemical Compounds

• Leakage Current 85%
• Resistance 40%
• Nonconductor 36%
• Dioxygen 31%
• Reduction 29%
• Multilayer 28%
• Valence 28%
• Behavior as Electrode 16%
• Application 10%

Physics & Astronomy

• leakage 53%
• oxygen 39%
• high resistance 10%
• logic 8%
• engineering 6%
• insulators 6%
• valence 6%
• electrodes 5%