Oxygen vacancy drift controlled three-terminal ReRAM with a reduction in operating gate bias and gate leakage current
Qi Wang*, Yaomi Itoh, Tohru Tsuruoka, Masakazu Aono, Deyan He, Tsuyoshi Hasegawa
*この研究の対応する著者
研究成果: Article › 査読
2
被引用数
(Scopus)