Oxygen Vacancy Induced Room-Temperature Metal-Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaics

Le Wang, Sibashisa Dash, Lei Chang, Lu You, Yaqing Feng, Xu He, Kui Juan Jin, Yang Zhou, Hock Guan Ong, Peng Ren, Shiwei Wang, Lang Chen, Junling Wang

研究成果: Article

40 引用 (Scopus)

抄録

(Graph Presented) Oxygen vacancy is intrinsically coupled with magnetic, electronic, and transport properties of transition-metal oxide materials and directly determines their multifunctionality. Here, we demonstrate reversible control of oxygen content by postannealing at temperature lower than 300 °C and realize the reversible metal-insulator transition in epitaxial NdNiO3 films. Importantly, over 6 orders of magnitude in the resistance modulation and a large change in optical bandgap are demonstrated at room temperature without destroying the parent framework and changing the p-type conductive mechanism. Further study revealed that oxygen vacancies stabilized the insulating phase at room temperature is universal for perovskite nickelate films. Acting as electron donors, oxygen vacancies not only stabilize the insulating phase at room temperature, but also induce a large magnetization of ∼50 emu/cm3 due to the formation of strongly correlated Ni2+ t2g 6eg 2 states. The bandgap opening is an order of magnitude larger than that of the thermally driven metal-insulator transition and continuously tunable. Potential application of the newly found insulating phase in photovoltaics has been demonstrated in the nickelate-based heterojunctions. Our discovery opens up new possibilities for strongly correlated perovskite nickelates.

元の言語English
ページ(範囲)9769-9776
ページ数8
ジャーナルACS Applied Materials and Interfaces
8
発行部数15
DOI
出版物ステータスPublished - 2016 4 20
外部発表Yes

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Metal insulator transition
Oxygen vacancies
Perovskite
Temperature
Epitaxial films
Optical band gaps
Electronic properties
Transport properties
Oxides
Transition metals
Heterojunctions
Magnetization
Magnetic properties
Energy gap
Modulation
Oxygen
Electrons
perovskite

ASJC Scopus subject areas

  • Materials Science(all)

これを引用

Oxygen Vacancy Induced Room-Temperature Metal-Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaics. / Wang, Le; Dash, Sibashisa; Chang, Lei; You, Lu; Feng, Yaqing; He, Xu; Jin, Kui Juan; Zhou, Yang; Ong, Hock Guan; Ren, Peng; Wang, Shiwei; Chen, Lang; Wang, Junling.

:: ACS Applied Materials and Interfaces, 巻 8, 番号 15, 20.04.2016, p. 9769-9776.

研究成果: Article

Wang, L, Dash, S, Chang, L, You, L, Feng, Y, He, X, Jin, KJ, Zhou, Y, Ong, HG, Ren, P, Wang, S, Chen, L & Wang, J 2016, 'Oxygen Vacancy Induced Room-Temperature Metal-Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaics', ACS Applied Materials and Interfaces, 巻. 8, 番号 15, pp. 9769-9776. https://doi.org/10.1021/acsami.6b00650
Wang, Le ; Dash, Sibashisa ; Chang, Lei ; You, Lu ; Feng, Yaqing ; He, Xu ; Jin, Kui Juan ; Zhou, Yang ; Ong, Hock Guan ; Ren, Peng ; Wang, Shiwei ; Chen, Lang ; Wang, Junling. / Oxygen Vacancy Induced Room-Temperature Metal-Insulator Transition in Nickelate Films and Its Potential Application in Photovoltaics. :: ACS Applied Materials and Interfaces. 2016 ; 巻 8, 番号 15. pp. 9769-9776.
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AU - Dash, Sibashisa

AU - Chang, Lei

AU - You, Lu

AU - Feng, Yaqing

AU - He, Xu

AU - Jin, Kui Juan

AU - Zhou, Yang

AU - Ong, Hock Guan

AU - Ren, Peng

AU - Wang, Shiwei

AU - Chen, Lang

AU - Wang, Junling

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AB - (Graph Presented) Oxygen vacancy is intrinsically coupled with magnetic, electronic, and transport properties of transition-metal oxide materials and directly determines their multifunctionality. Here, we demonstrate reversible control of oxygen content by postannealing at temperature lower than 300 °C and realize the reversible metal-insulator transition in epitaxial NdNiO3 films. Importantly, over 6 orders of magnitude in the resistance modulation and a large change in optical bandgap are demonstrated at room temperature without destroying the parent framework and changing the p-type conductive mechanism. Further study revealed that oxygen vacancies stabilized the insulating phase at room temperature is universal for perovskite nickelate films. Acting as electron donors, oxygen vacancies not only stabilize the insulating phase at room temperature, but also induce a large magnetization of ∼50 emu/cm3 due to the formation of strongly correlated Ni2+ t2g 6eg 2 states. The bandgap opening is an order of magnitude larger than that of the thermally driven metal-insulator transition and continuously tunable. Potential application of the newly found insulating phase in photovoltaics has been demonstrated in the nickelate-based heterojunctions. Our discovery opens up new possibilities for strongly correlated perovskite nickelates.

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KW - oxygen vacancy

KW - photovoltaics

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