Ozone-treated channel diamond field-effect transistors

Toshikatsu Sakai, Kwan Soup Song, Hirofumi Kanazawa, Yusuke Nakamura, Hitoshi Umezawa, Minoru Tachiki, Hiroshi Kawarada*

*この研究の対応する著者

研究成果: Article査読

48 被引用数 (Scopus)

抄録

Diamond field-effect transistors (FETs) whose channel is partially oxidized and highly resistive are fabricated by ozone treatment. These FETs are operated in electrolyte solutions. From XPS analyses, it is evident that hydrogen-terminated (H-terminated) diamond is partially oxygen-terminated (O-terminated) by ozone treatment. The quantification of surface oxygen in ozone-treated diamond is carried out. The quantification shows that the surface oxygen increases with an increase in ozone treatment time indicating the control of oxygen coverage. The partially O-terminated diamond surface channel is much less conductive compared with the H-terminated diamond. The ozone-treated FETs were operated stably even though the channel of the FETs becomes highly resistive. For the sensing of particular ions or molecules by the immobilization of sensing components, the control of surface termination is necessary.

本文言語English
ページ(範囲)1971-1975
ページ数5
ジャーナルDiamond and Related Materials
12
10-11
DOI
出版ステータスPublished - 2003

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 化学 (全般)
  • 機械工学
  • 材料化学
  • 電子工学および電気工学

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