P-i-n homojunction in organic light-emitting transistors

Satria Zulkarnaen Bisri, Taishi Takenobu, Kosuke Sawabe, Satoshi Tsuda, Yohei Yomogida, Takeshi Yamao, Shu Hotta, Chihaya Adachi, Yoshihiro Iwasa

    研究成果: Article査読

    65 被引用数 (Scopus)

    抄録

    A new method for investigating light-emitting property in organic devices is demonstrated. We apply the ambipolar light-emitting transistors (LETs) to directly observe the recombination zone, and find a strong link between the transistor performance and the zone size. This finding unambiguously indicates that the light emission comes from the electric-field-induced p-i-n homojunction in ambipolar LETs.

    本文言語English
    ページ(範囲)2753-2758
    ページ数6
    ジャーナルAdvanced Materials
    23
    24
    DOI
    出版ステータスPublished - 2011 6 24

    ASJC Scopus subject areas

    • Materials Science(all)
    • Mechanics of Materials
    • Mechanical Engineering

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