P-InGaN/n-GaN vertical conducting diodes on n+-SiC substrate for high power electronic device applications

Atsushi Nishikawa, Kazuhide Kumakura, Tetsuya Akasaka, Toshiki Makimoto

研究成果: Article

3 引用 (Scopus)

抄録

We have investigated the current-voltage (I-V) characteristics of p-InGaN/n-GaN vertical conducting diodes grown on n+-SiC substrates by low-pressure metal organic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) of 250V was obtained with a low on-state resistance (R on) of 1.28mΩcm2 when the n-GaN layer thickness was increased to 1800nm, leading to the high figure-of-merit, (VB) 2/Ron, of 49 MW/cm2. With increasing measurement temperature from room temperature (RT) to 520 K, the on-state resistance decreased due to the reduced contact resistance of the p-InGaN layer, while the breakdown voltage remained almost constant because of fewer defects in the n-GaN layer. These I-V characteristics are preferable for high-power and high-temperature electronic device applications.

元の言語English
ページ(範囲)3387-3390
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
45
発行部数4 B
DOI
出版物ステータスPublished - 2006 4 25
外部発表Yes

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Current voltage characteristics
Power electronics
Electric breakdown
Diodes
diodes
electrical faults
conduction
Vapor phase epitaxy
Substrates
Contact resistance
electronics
Temperature measurement
electric potential
contact resistance
vapor phase epitaxy
figure of merit
Temperature
Defects
temperature measurement
low pressure

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

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title = "P-InGaN/n-GaN vertical conducting diodes on n+-SiC substrate for high power electronic device applications",
abstract = "We have investigated the current-voltage (I-V) characteristics of p-InGaN/n-GaN vertical conducting diodes grown on n+-SiC substrates by low-pressure metal organic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) of 250V was obtained with a low on-state resistance (R on) of 1.28mΩcm2 when the n-GaN layer thickness was increased to 1800nm, leading to the high figure-of-merit, (VB) 2/Ron, of 49 MW/cm2. With increasing measurement temperature from room temperature (RT) to 520 K, the on-state resistance decreased due to the reduced contact resistance of the p-InGaN layer, while the breakdown voltage remained almost constant because of fewer defects in the n-GaN layer. These I-V characteristics are preferable for high-power and high-temperature electronic device applications.",
keywords = "Breakdown voltage, InGaN/GaN, N-SiC, On-state resistance, Vertical conducting structure",
author = "Atsushi Nishikawa and Kazuhide Kumakura and Tetsuya Akasaka and Toshiki Makimoto",
year = "2006",
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T1 - P-InGaN/n-GaN vertical conducting diodes on n+-SiC substrate for high power electronic device applications

AU - Nishikawa, Atsushi

AU - Kumakura, Kazuhide

AU - Akasaka, Tetsuya

AU - Makimoto, Toshiki

PY - 2006/4/25

Y1 - 2006/4/25

N2 - We have investigated the current-voltage (I-V) characteristics of p-InGaN/n-GaN vertical conducting diodes grown on n+-SiC substrates by low-pressure metal organic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) of 250V was obtained with a low on-state resistance (R on) of 1.28mΩcm2 when the n-GaN layer thickness was increased to 1800nm, leading to the high figure-of-merit, (VB) 2/Ron, of 49 MW/cm2. With increasing measurement temperature from room temperature (RT) to 520 K, the on-state resistance decreased due to the reduced contact resistance of the p-InGaN layer, while the breakdown voltage remained almost constant because of fewer defects in the n-GaN layer. These I-V characteristics are preferable for high-power and high-temperature electronic device applications.

AB - We have investigated the current-voltage (I-V) characteristics of p-InGaN/n-GaN vertical conducting diodes grown on n+-SiC substrates by low-pressure metal organic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) of 250V was obtained with a low on-state resistance (R on) of 1.28mΩcm2 when the n-GaN layer thickness was increased to 1800nm, leading to the high figure-of-merit, (VB) 2/Ron, of 49 MW/cm2. With increasing measurement temperature from room temperature (RT) to 520 K, the on-state resistance decreased due to the reduced contact resistance of the p-InGaN layer, while the breakdown voltage remained almost constant because of fewer defects in the n-GaN layer. These I-V characteristics are preferable for high-power and high-temperature electronic device applications.

KW - Breakdown voltage

KW - InGaN/GaN

KW - N-SiC

KW - On-state resistance

KW - Vertical conducting structure

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4 B

ER -