We have investigated the current-voltage (I-V) characteristics of p-InGaN/n-GaN vertical conducting diodes grown on n+-SiC substrates by low-pressure metal organic vapor phase epitaxy (MOVPE). The breakdown voltage (VB) of 250V was obtained with a low on-state resistance (R on) of 1.28mΩcm2 when the n-GaN layer thickness was increased to 1800nm, leading to the high figure-of-merit, (VB) 2/Ron, of 49 MW/cm2. With increasing measurement temperature from room temperature (RT) to 520 K, the on-state resistance decreased due to the reduced contact resistance of the p-InGaN layer, while the breakdown voltage remained almost constant because of fewer defects in the n-GaN layer. These I-V characteristics are preferable for high-power and high-temperature electronic device applications.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版物ステータス||Published - 2006 4 25|
ASJC Scopus subject areas
- Physics and Astronomy(all)