P-InGaN/n-GaN vertical conducting diodes on n⁺-SiC substrate for high power electronic device applications

We have investigated the current-voltage (I-V) characteristics of p-InGaN/n-GaN vertical conducting diodes grown on n⁺-SiC substrates by low-pressure metal organic vapor phase epitaxy (MOVPE). The breakdown voltage (V_B) of 250V was obtained with a low on-state resistance (R _on) of 1.28mΩcm² when the n-GaN layer thickness was increased to 1800nm, leading to the high figure-of-merit, (V_B) ²/R_on, of 49 MW/cm². With increasing measurement temperature from room temperature (RT) to 520 K, the on-state resistance decreased due to the reduced contact resistance of the p-InGaN layer, while the breakdown voltage remained almost constant because of fewer defects in the n-GaN layer. These I-V characteristics are preferable for high-power and high-temperature electronic device applications.