P -type conduction mechanism in continuously varied non-stoichimetric SnOx thin films deposited by reactive sputtering with the impedance control

Junjun Jia*, Takumi Sugane, Shin Ichi Nakamura, Yuzo Shigesato

*この研究の対応する著者

研究成果査読

2 被引用数 (Scopus)

抄録

We successfully fabricated a series of SnO x films varying from SnO 2 to SnO using reactive sputtering. By precisely tailoring the transition region in reactive sputtering, a continuous structural evolution from SnO 2 to SnO was observed with SnO 2 films showing a typical columnar structure and SnO films having a dense film structure with larger crystallites. X-ray diffraction measurement confirmed that the fabricated SnO films coexist with the minor SnO 2 and Sn 3 O 4 phases. SnO films exhibit an unintentional p-type conductivity, and the interstitial oxygen possibly acts as the acceptor. The maximum hole mobility is 3.38 cm 2 / V s at a hole concentration of 1.12 × 10 18 cm - 3. We propose a p-type conduction mechanism for those SnO x films with the major SnO phase coexisting with the minor SnO 2 and Sn 3 O 4 phases, in which the possible optimum for the hole transport can be achieved by tailoring the balance between the amounts of the SnO 2 / Sn 3 O 4 phases and interstitial oxygen.

本文言語English
論文番号185703
ジャーナルJournal of Applied Physics
127
18
DOI
出版ステータスPublished - 2020 5 14
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

フィンガープリント

「P -type conduction mechanism in continuously varied non-stoichimetric SnO<sub>x </sub>thin films deposited by reactive sputtering with the impedance control」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル