P-type polysilicon processing temperature reduction using in situ boron-doped amorphous silicon

Takashi Kobayashi*, Simpei Iijima, Atsushi Hiraiwa

*この研究の対応する著者

研究成果: Article査読

3 被引用数 (Scopus)

抄録

In situ boron-doped Si films are deposited in an amorphous state using Si2H6 and B2H6. By addition of B2H6, deposition at temperatures as low as 300°C is made possible with a sufficient deposition rate. In addition, the films show excellent step coverage. Resistivity of the films is fully reduced even after annealing at 650°C, which results from grain growth and dopant activation at low temperatures.

本文言語English
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
32
5 A
出版ステータスPublished - 1993 5月 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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