In situ boron-doped Si films are deposited in an amorphous state using Si2H6 and B2H6. By addition of B2H6, deposition at temperatures as low as 300°C is made possible with a sufficient deposition rate. In addition, the films show excellent step coverage. Resistivity of the films is fully reduced even after annealing at 650°C, which results from grain growth and dopant activation at low temperatures.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||Published - 1993 5月 1|
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