Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses

H. Nishikawa, R. Nakamura, R. Tohmon, Y. Ohki, Y. Hama, Y. Sakurai, K. Nagasawa

研究成果: Conference article査読

抄録

High-purity silica glasses prepared by various manufacturing methods were investigated after irradiation with an ArF excimer laser. Defect species and concentrations were found to be dependent on oxygen stoichiometry and impurities: E′ centers are induced in oxygen-deficient high-OH silica at concentrations of 1016/cm3, while at one or two orders of lower concentrations in other types of samples. Defect centers in γ-irradiated silicas studied for comparison, show a similar dependency on oxygen stoichiometry and impurities. In addition, O2- ions are observed in oxygen-surplus samples after γ-irradiation, which were created presumably by the trapping of free electrons. Isochronal annealing experiments indicate that the annealing of E′ centers in ArF-laser irradiated samples are due to the diffusion of O2 and H2O.

本文言語English
ページ(範囲)69-78
ページ数10
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
1327
出版ステータスPublished - 1990 12 1
イベントProperties and Characteristics of Optical Glass II - San Diego, CA, USA
継続期間: 1990 7 121990 7 13

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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