High-purity silica glasses prepared by various manufacturing methods were investigated after irradiation with an ArF excimer laser. Defect species and concentrations were found to be dependent on oxygen stoichiometry and impurities: E′ centers are induced in oxygen-deficient high-OH silica at concentrations of 1016/cm3, while at one or two orders of lower concentrations in other types of samples. Defect centers in γ-irradiated silicas studied for comparison, show a similar dependency on oxygen stoichiometry and impurities. In addition, O2- ions are observed in oxygen-surplus samples after γ-irradiation, which were created presumably by the trapping of free electrons. Isochronal annealing experiments indicate that the annealing of E′ centers in ArF-laser irradiated samples are due to the diffusion of O2 and H2O.
|ジャーナル||Proceedings of SPIE - The International Society for Optical Engineering|
|出版ステータス||Published - 1990 12 1|
|イベント||Properties and Characteristics of Optical Glass II - San Diego, CA, USA|
継続期間: 1990 7 12 → 1990 7 13
ASJC Scopus subject areas
- コンピュータ サイエンスの応用