Passive alignment and mounting of LiNbO3 waveguide chips on Si substrates by low-temperature solid-state bonding of Au

Ryo Takigawa*, Eiji Higurashi, Tadatomo Suga, Tetsuya Kawanishi

*この研究の対応する著者

研究成果: Article査読

37 被引用数 (Scopus)

抄録

In this study, passive alignment and mounting of lithium niobate (LiNbO3) chips, with a large mismatch in the coefficient of thermal expansion with most semiconductors, are demonstrated for hybrid-integrated optical devices. LiNbO3 chips were aligned passively using the visual index alignment method and were subsequently bonded on the Si substrates by low-temperature solid-state bonding with Au microbumps, which allow for electrical connections and heat dissipation. Au-Au bonding was carried out at 100 °C in ambient air after surface activation by argon RF plasma. The vertical bonding accuracy was determined by assessing the height variations of the Au microbumps due to the plastic deformation in the bonding process. The bonding accuracies in the horizontal and vertical directions were estimated to be within ±1 μm. Average excess loss due to misalignment between titanium-diffused single-mode LiNbO3 waveguides and V-groove-guided single-mode fibers was about 0.5-dBm per interface (wavelength: 1.55 μm).

本文言語English
論文番号5713807
ページ(範囲)652-658
ページ数7
ジャーナルIEEE Journal on Selected Topics in Quantum Electronics
17
3
DOI
出版ステータスPublished - 2011 5
外部発表はい

ASJC Scopus subject areas

  • 原子分子物理学および光学
  • 電子工学および電気工学

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