Percolation in implanted Si film

Atsushi Hiraiwa, Takashi Kobayashi

研究成果: Article

2 引用 (Scopus)

抄録

The conductivity degradation of implanted Si film has been characterized by nuclear-deposited energy independently of implant conditions. The conductivity decreases as a result of the carrier density change for the nuclear-deposited energy En ≤ 1 × 1023 eV/cm3, and becomes zero with mobility for En = 2.5 × 1024 eV/cm3. These results have been investigated by the percolation theory with the assistance of the Kinchin-Pease theory. The decrease in carrier density is a result of carrier trapping by vacancy-related defects. The mobility becomes zero when the nondamaged Si cluster is localized by a heavy implantation. The calculation using the site percolation is in good agreement with the experiments, where 0.428 is assumed as the percolation threshold, and 2 as the conductivity exponent. The Si displacement energy obtained is 25 eV by comparing the theory with the experiments. The experimental results suggest that microscopically conductive domains exist even in films that are macroscopically insulating.

元の言語English
ページ(範囲)309-312
ページ数4
ジャーナルJournal of Applied Physics
70
発行部数1
DOI
出版物ステータスPublished - 1991
外部発表Yes

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nuclear energy
conductivity
implantation
trapping
exponents
degradation
thresholds
defects
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

これを引用

Percolation in implanted Si film. / Hiraiwa, Atsushi; Kobayashi, Takashi.

:: Journal of Applied Physics, 巻 70, 番号 1, 1991, p. 309-312.

研究成果: Article

Hiraiwa, A & Kobayashi, T 1991, 'Percolation in implanted Si film', Journal of Applied Physics, 巻. 70, 番号 1, pp. 309-312. https://doi.org/10.1063/1.350274
Hiraiwa, Atsushi ; Kobayashi, Takashi. / Percolation in implanted Si film. :: Journal of Applied Physics. 1991 ; 巻 70, 番号 1. pp. 309-312.
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