Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method

T. Shinada, M. Hori, Y. Ono, K. Taira, A. Komatsubara, Takashi Tanii, T. Endoh, I. Ohdomari

    研究成果: Conference contribution

    抄録

    This paper presents the fabrication and measurements of MOSFETs with various dopant distributions in the channels for investigating the impact of discrete dopant distribution on device performances. Phosphorus-ions are implanted "orderly" into the channels as well as " asymmetrically" into one side of channels both with ordered and random distribution by single-ion implanter with capability of one-by-one doping. Electrical measurements reveal that the threshold voltage (Vth) fluctuation for the ordered dopant arrays is less than for conventional random doping and the device with ordered dopant array exhibits two times the lower average value (-0.4V) of Vth shift than the random dopant distribution (-0.2V). We conclude that the observed lower value originates from the uniformity of electrostatic potential in the channel region due to the ordered distribution of dopants. We also observe deviation in subthreshold current when interchanging the source and drain terminals. The subthreshold current is always larger when the dopants are located at the drain side than at the source side for both ordered and random distribution cases. We believe that this increase in current is caused by the suppression of injection velocity degradation in the source side. Accurately controlling both the amount and the positioning of dopant atoms is critical for the advancement of extending CMOS technologies with reduced variation caused by random dopant fluctuation.

    元の言語English
    ホスト出版物のタイトルProceedings of SPIE - The International Society for Optical Engineering
    7637
    DOI
    出版物ステータスPublished - 2010
    イベントAlternative Lithographic Technologies II - San Jose, CA
    継続期間: 2010 2 232010 2 25

    Other

    OtherAlternative Lithographic Technologies II
    San Jose, CA
    期間10/2/2310/2/25

    Fingerprint

    MOSFET
    Discrete Distributions
    Performance Evaluation
    field effect transistors
    Doping (additives)
    statistical distributions
    evaluation
    Fluctuations
    Phosphorus
    Uniformity
    threshold voltage
    Electrostatics
    electrical measurement
    positioning
    Positioning
    phosphorus
    Injection
    Fabrication
    CMOS
    ions

    ASJC Scopus subject areas

    • Applied Mathematics
    • Computer Science Applications
    • Electrical and Electronic Engineering
    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    これを引用

    Shinada, T., Hori, M., Ono, Y., Taira, K., Komatsubara, A., Tanii, T., ... Ohdomari, I. (2010). Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method. : Proceedings of SPIE - The International Society for Optical Engineering (巻 7637). [763711] https://doi.org/10.1117/12.848322

    Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method. / Shinada, T.; Hori, M.; Ono, Y.; Taira, K.; Komatsubara, A.; Tanii, Takashi; Endoh, T.; Ohdomari, I.

    Proceedings of SPIE - The International Society for Optical Engineering. 巻 7637 2010. 763711.

    研究成果: Conference contribution

    Shinada, T, Hori, M, Ono, Y, Taira, K, Komatsubara, A, Tanii, T, Endoh, T & Ohdomari, I 2010, Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method. : Proceedings of SPIE - The International Society for Optical Engineering. 巻. 7637, 763711, Alternative Lithographic Technologies II, San Jose, CA, 10/2/23. https://doi.org/10.1117/12.848322
    Shinada T, Hori M, Ono Y, Taira K, Komatsubara A, Tanii T その他. Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method. : Proceedings of SPIE - The International Society for Optical Engineering. 巻 7637. 2010. 763711 https://doi.org/10.1117/12.848322
    Shinada, T. ; Hori, M. ; Ono, Y. ; Taira, K. ; Komatsubara, A. ; Tanii, Takashi ; Endoh, T. ; Ohdomari, I. / Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method. Proceedings of SPIE - The International Society for Optical Engineering. 巻 7637 2010.
    @inproceedings{b6b8b59fb8ba484da0baf71a261e6543,
    title = "Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method",
    abstract = "This paper presents the fabrication and measurements of MOSFETs with various dopant distributions in the channels for investigating the impact of discrete dopant distribution on device performances. Phosphorus-ions are implanted {"}orderly{"} into the channels as well as {"} asymmetrically{"} into one side of channels both with ordered and random distribution by single-ion implanter with capability of one-by-one doping. Electrical measurements reveal that the threshold voltage (Vth) fluctuation for the ordered dopant arrays is less than for conventional random doping and the device with ordered dopant array exhibits two times the lower average value (-0.4V) of Vth shift than the random dopant distribution (-0.2V). We conclude that the observed lower value originates from the uniformity of electrostatic potential in the channel region due to the ordered distribution of dopants. We also observe deviation in subthreshold current when interchanging the source and drain terminals. The subthreshold current is always larger when the dopants are located at the drain side than at the source side for both ordered and random distribution cases. We believe that this increase in current is caused by the suppression of injection velocity degradation in the source side. Accurately controlling both the amount and the positioning of dopant atoms is critical for the advancement of extending CMOS technologies with reduced variation caused by random dopant fluctuation.",
    keywords = "Deterministic doping, Ordered dopant arrays, Single atom doping, Single ion implantation",
    author = "T. Shinada and M. Hori and Y. Ono and K. Taira and A. Komatsubara and Takashi Tanii and T. Endoh and I. Ohdomari",
    year = "2010",
    doi = "10.1117/12.848322",
    language = "English",
    isbn = "9780819480514",
    volume = "7637",
    booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",

    }

    TY - GEN

    T1 - Performance evaluation of MOSFETs with discrete dopant distribution by one-by-one doping method

    AU - Shinada, T.

    AU - Hori, M.

    AU - Ono, Y.

    AU - Taira, K.

    AU - Komatsubara, A.

    AU - Tanii, Takashi

    AU - Endoh, T.

    AU - Ohdomari, I.

    PY - 2010

    Y1 - 2010

    N2 - This paper presents the fabrication and measurements of MOSFETs with various dopant distributions in the channels for investigating the impact of discrete dopant distribution on device performances. Phosphorus-ions are implanted "orderly" into the channels as well as " asymmetrically" into one side of channels both with ordered and random distribution by single-ion implanter with capability of one-by-one doping. Electrical measurements reveal that the threshold voltage (Vth) fluctuation for the ordered dopant arrays is less than for conventional random doping and the device with ordered dopant array exhibits two times the lower average value (-0.4V) of Vth shift than the random dopant distribution (-0.2V). We conclude that the observed lower value originates from the uniformity of electrostatic potential in the channel region due to the ordered distribution of dopants. We also observe deviation in subthreshold current when interchanging the source and drain terminals. The subthreshold current is always larger when the dopants are located at the drain side than at the source side for both ordered and random distribution cases. We believe that this increase in current is caused by the suppression of injection velocity degradation in the source side. Accurately controlling both the amount and the positioning of dopant atoms is critical for the advancement of extending CMOS technologies with reduced variation caused by random dopant fluctuation.

    AB - This paper presents the fabrication and measurements of MOSFETs with various dopant distributions in the channels for investigating the impact of discrete dopant distribution on device performances. Phosphorus-ions are implanted "orderly" into the channels as well as " asymmetrically" into one side of channels both with ordered and random distribution by single-ion implanter with capability of one-by-one doping. Electrical measurements reveal that the threshold voltage (Vth) fluctuation for the ordered dopant arrays is less than for conventional random doping and the device with ordered dopant array exhibits two times the lower average value (-0.4V) of Vth shift than the random dopant distribution (-0.2V). We conclude that the observed lower value originates from the uniformity of electrostatic potential in the channel region due to the ordered distribution of dopants. We also observe deviation in subthreshold current when interchanging the source and drain terminals. The subthreshold current is always larger when the dopants are located at the drain side than at the source side for both ordered and random distribution cases. We believe that this increase in current is caused by the suppression of injection velocity degradation in the source side. Accurately controlling both the amount and the positioning of dopant atoms is critical for the advancement of extending CMOS technologies with reduced variation caused by random dopant fluctuation.

    KW - Deterministic doping

    KW - Ordered dopant arrays

    KW - Single atom doping

    KW - Single ion implantation

    UR - http://www.scopus.com/inward/record.url?scp=77953319230&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=77953319230&partnerID=8YFLogxK

    U2 - 10.1117/12.848322

    DO - 10.1117/12.848322

    M3 - Conference contribution

    AN - SCOPUS:77953319230

    SN - 9780819480514

    VL - 7637

    BT - Proceedings of SPIE - The International Society for Optical Engineering

    ER -