抄録
An all-optical AND gate using photonic-crystal quantum dot semiconductor optical amplifiers is designed and its performance is evaluated. The input–output characteristics of the gate are simulated using a rate equation model and it is found that the gate can achieve a maximum of ∼9 dB extinction ratio at 160 Gb/s. The proposed gate is compared with quantum dot semiconductor optical amplifiers AND gate to evaluate its effectiveness with regard to signal quality, device size, and power consumption.
本文言語 | English |
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ページ(範囲) | 580-582 |
ページ数 | 3 |
ジャーナル | Electronics Letters |
巻 | 54 |
号 | 9 |
DOI | |
出版ステータス | Published - 2018 5月 3 |
外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学