抄録
An all-optical AND gate using photonic-crystal quantum dot semiconductor optical amplifiers is designed and its performance is evaluated. The input–output characteristics of the gate are simulated using a rate equation model and it is found that the gate can achieve a maximum of ∼9 dB extinction ratio at 160 Gb/s. The proposed gate is compared with quantum dot semiconductor optical amplifiers AND gate to evaluate its effectiveness with regard to signal quality, device size, and power consumption.
| 本文言語 | English |
|---|---|
| ページ（範囲） | 580-582 |
| ページ数 | 3 |
| ジャーナル | Electronics Letters |
| 巻 | 54 |
| 号 | 9 |
| DOI | |
| 出版ステータス | Published - 2018 5 3 |
| 外部発表 | はい |
ASJC Scopus subject areas
- 電子工学および電気工学