Phase instability of n-CdS grown by molecular-beam epitaxy

T. Yamada, C. Setiagung, A. W. Jia, Masakazu Kobayashi, A. Yoshikawa

研究成果: Article

8 引用 (Scopus)

抄録

The metastable nature of molecular-beam epitaxy grown CdS layers was studied. Undoped CdS layers were grown on (100) GaAs substrates/(100) ZnSe buffer layers, and crystal structures were characterized by x-ray diffraction and transmission electron microscopy. Undoped films showed both zincblende and wurtzite structures depending on the growth condition; higher substrate temperatures and smaller VI/II beam intensity ratios preferentially form wurtzite structures. The Ga doping significantly affected the crystal structure and Ga doped CdS layers preferentially formed wurtzite structures. Thermal instability of the CdS film was observed through various ex situ annealing experiments. The wurtzite structure phase was developed from the zincblende structure CdS layers by thermal annealing where the annealing temperature was lower than the growth temperature.

元の言語English
ページ(範囲)2371-2373
ページ数3
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
14
発行部数3
出版物ステータスPublished - 1996 5
外部発表Yes

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Molecular beam epitaxy
molecular beam epitaxy
wurtzite
Annealing
Crystal structure
zincblende
annealing
Growth temperature
Substrates
Buffer layers
Phase structure
Diffraction
Doping (additives)
crystal structure
thermal instability
Transmission electron microscopy
X rays
Temperature
x ray diffraction
buffers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

これを引用

Phase instability of n-CdS grown by molecular-beam epitaxy. / Yamada, T.; Setiagung, C.; Jia, A. W.; Kobayashi, Masakazu; Yoshikawa, A.

:: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 巻 14, 番号 3, 05.1996, p. 2371-2373.

研究成果: Article

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AU - Yoshikawa, A.

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