Phase instability of n-CdS grown by molecular-beam epitaxy

T. Yamada, C. Setiagung, A. W. Jia, M. Kobayashi, A. Yoshikawa

研究成果: Article査読

8 被引用数 (Scopus)

抄録

The metastable nature of molecular-beam epitaxy grown CdS layers was studied. Undoped CdS layers were grown on (100) GaAs substrates/(100) ZnSe buffer layers, and crystal structures were characterized by x-ray diffraction and transmission electron microscopy. Undoped films showed both zincblende and wurtzite structures depending on the growth condition; higher substrate temperatures and smaller VI/II beam intensity ratios preferentially form wurtzite structures. The Ga doping significantly affected the crystal structure and Ga doped CdS layers preferentially formed wurtzite structures. Thermal instability of the CdS film was observed through various ex situ annealing experiments. The wurtzite structure phase was developed from the zincblende structure CdS layers by thermal annealing where the annealing temperature was lower than the growth temperature.

本文言語English
ページ(範囲)2371-2373
ページ数3
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
14
3
DOI
出版ステータスPublished - 1996 1 1
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子工学および電気工学

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