We have developed a phenomenological theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and misfit-dislocations (MDs). Our theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Moreover, we also formulate a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs(110) obtained by this procedure is in good agreement with the experimentally obtained value.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版物ステータス||Published - 2000 9 15|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)