Phenomenological theory of semiconductor epitaxial growth with misfit-dislocations

Ko Okajima, Kyozaburo Takeda, Norihisa Oyama, Eiji Ohta, Kenji Shiraishi, Takahisa Ohno

    研究成果: Article

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    We have developed a phenomenological theory of growth behavior in semiconductor heteroepitaxy that includes the effects of the formation of Stranski-Krastanov (SK) islands and misfit-dislocations (MDs). Our theory can reproduce the various types of growth behavior observed in heteroepitaxial growth. Moreover, we also formulate a procedure for determining the phenomenological parameters that includes atomistic calculations. The critical thickness of InAs/GaAs(110) obtained by this procedure is in good agreement with the experimentally obtained value.

    元の言語English
    ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
    39
    発行部数9 A/B
    出版物ステータスPublished - 2000 9 15

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    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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