抄録
An expression for the phonon relaxation rate due to the electron-phonon interaction has been derived for heavily doped many-valley semiconductors by solving the equation of motion for the single-particle density matrix within the relaxation time approximation. Detailed calculations have been performed for longitudinal phonons in n-type Ge at 0K. It is shown that acoustic waves which remove the degeneracy of the conduction-band valleys are strongly attenuated for q<or approximately=2kF where q is the phonon wavenumber and kF the Fermi wavenumber. Comparison with other expressions is also given.
| 本文言語 | English |
|---|---|
| 論文番号 | 012 |
| ページ（範囲） | 6991-7002 |
| ページ数 | 12 |
| ジャーナル | Journal of Physics C: Solid State Physics |
| 巻 | 15 |
| 号 | 34 |
| DOI | |
| 出版ステータス | Published - 1982 12 1 |
ASJC Scopus subject areas
- 凝縮系物理学
- 工学（全般）
- 物理学および天文学（全般）