Phonon attenuation in heavily doped many-valley semiconductors

T. Sota*, K. Suzuki

*この研究の対応する著者

研究成果: Article査読

15 被引用数 (Scopus)

抄録

An expression for the phonon relaxation rate due to the electron-phonon interaction has been derived for heavily doped many-valley semiconductors by solving the equation of motion for the single-particle density matrix within the relaxation time approximation. Detailed calculations have been performed for longitudinal phonons in n-type Ge at 0K. It is shown that acoustic waves which remove the degeneracy of the conduction-band valleys are strongly attenuated for q<or approximately=2kF where q is the phonon wavenumber and kF the Fermi wavenumber. Comparison with other expressions is also given.

本文言語English
論文番号012
ページ(範囲)6991-7002
ページ数12
ジャーナルJournal of Physics C: Solid State Physics
15
34
DOI
出版ステータスPublished - 1982 12 1

ASJC Scopus subject areas

  • 凝縮系物理学
  • 工学(全般)
  • 物理学および天文学(全般)

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