抄録
An expression for the phonon relaxation rate due to the electron-phonon interaction has been derived for heavily doped many-valley semiconductors by solving the equation of motion for the single-particle density matrix within the relaxation time approximation. Detailed calculations have been performed for longitudinal phonons in n-type Ge at 0K. It is shown that acoustic waves which remove the degeneracy of the conduction-band valleys are strongly attenuated for q<or approximately=2kF where q is the phonon wavenumber and kF the Fermi wavenumber. Comparison with other expressions is also given.
本文言語 | English |
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論文番号 | 012 |
ページ(範囲) | 6991-7002 |
ページ数 | 12 |
ジャーナル | Journal of Physics C: Solid State Physics |
巻 | 15 |
号 | 34 |
DOI | |
出版ステータス | Published - 1982 12 1 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Engineering(all)
- Physics and Astronomy(all)