Phonon dispersion in <100> Si nanowire covered with SiO2 Film calculated by molecular dynamics simulation

T. Watanabe, T. Zushi, M. Tomita, R. Kuriyama, N. Aoki, T. Kamioka

研究成果: Conference contribution

4 被引用数 (Scopus)

抄録

The phonon dispersion relation in <100> Si nanowire (SiNW) is calculated by employing a realistic atomistic model surrounded by thin SiO 2 layers. We performed molecular dynamics simulation to calculate the dynamical structure factor by the space-time Fourier transform of atomic trajectories, and extracted the phonon dispersion relations. Although the bulk dispersion relations are maintained in the SiNWs on the whole, acoustic phonon branches are diffused beyond recognition, which is considered as the origin of the thermal conductivity degradation in SiNWs. A red shift of the transverse optical mode also appears probably due to the lattice strain induced by the outer oxide film. These results provide a foothold to estimate the electron-phonon scattering rates and the heat transport processes in realistic SiNWs.

本文言語English
ホスト出版物のタイトルSiGe, Ge, and Related Compounds 5
ホスト出版物のサブタイトルMaterials, Processing, and Devices
出版社Electrochemical Society Inc.
ページ673-680
ページ数8
9
ISBN(印刷版)9781607683575
DOI
出版ステータスPublished - 2013
イベント5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting - Honolulu, HI, United States
継続期間: 2012 10 72012 10 12

出版物シリーズ

名前ECS Transactions
番号9
50
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Conference

Conference5th SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 220th ECS Meeting
国/地域United States
CityHonolulu, HI
Period12/10/712/10/12

ASJC Scopus subject areas

  • 工学(全般)

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