Phonons with long mean free paths in a-Si and a-Ge

Tianzhuo Zhan, Yibin Xu, Masahiro Goto, Yoshihisa Tanaka, Ryozo Kato, Michiko Sasaki, Yutaka Kagawa

研究成果: Article査読

25 被引用数 (Scopus)

抄録

We investigated phonons with long mean free paths (MFPs) in amorphous Si (a-Si) and amorphous Ge (a-Ge). The thermal conductivity of a-Si and a-Ge thin films prepared by magnetron sputtering was found to depend on film thickness and deposition temperature. From the film thickness dependence, we conclude that phonons with MFPs longer than 100 nm contribute to heat transport in a-Si and a-Ge. Also, as deposition temperature was increased, phonons with MFPs ranging from 100 to 250 nm in a-Si and from 15 to 250 nm in a-Ge increased.

本文言語English
論文番号071911
ジャーナルApplied Physics Letters
104
7
DOI
出版ステータスPublished - 2014 1 1
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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