Phosphosilicate glass passivation for ULSI Cu metallization

H. Miyazaki, H. Kojima, A. Hiraiwa, Y. Homma, K. Murakami

研究成果: Article

14 引用 (Scopus)

抜粋

Phosphosilicate glass (PSG) passivation for Cu metallization is proposed, and the Cu diffusion rate into Si substrates through various oxide structures is measured quantitatively. Cu diffusion is suppressed effectively by the PSG passivation resulting in reduction of the diffused Cu atoms to about an order of magnitude less than when passivated by nondoped SiO2 films. The passivation is effective when the annealing temperature is less than 600°C. The apparent activation energy of Cu diffusion for the nondoped SiO2/Si substrate and PSG/nondoped SiO2/Si is 1.2 and 1.6 eV, respectively. However, most of the diffused Cu precipitates near the oxide/Si substrate interface and the amount of the diffused Cu is comparable to the limit for ordinary device contamination. Thus, further improvement or optimization of the passivation layer structure is desired.

元の言語English
ページ(範囲)3264-3267
ページ数4
ジャーナルJournal of the Electrochemical Society
139
発行部数11
出版物ステータスPublished - 1992 11
外部発表Yes

ASJC Scopus subject areas

  • Electrochemistry
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

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  • これを引用

    Miyazaki, H., Kojima, H., Hiraiwa, A., Homma, Y., & Murakami, K. (1992). Phosphosilicate glass passivation for ULSI Cu metallization. Journal of the Electrochemical Society, 139(11), 3264-3267.