Photo-induced refractive index change in hydrogenated amorphous silicon oxynitride

Hiromitsu Kato*, Makoto Fujimaki, Takashi Noma, Yoshimichi Ohki

*この研究の対応する著者

研究成果: Article査読

13 被引用数 (Scopus)

抄録

Refractive index change is shown to be induced by the irradiation of ultraviolet photons in hydrogenated amorphous silicon oxynitride films prepared by plasma-enhanced chemical vapor deposition. The mechanism of the index change and its dependence on the nitrogen content were investigated by electron spin resonance and scanning electron microscopy. It is concluded that the index change is due mainly to densification, and that the contribution of the formation of paramagnetic defects is only slight. To demonstrate the versatility of this refractive index change, a planar diffraction grating was fabricated.

本文言語English
ページ(範囲)6350-6353
ページ数4
ジャーナルJournal of Applied Physics
91
10 I
DOI
出版ステータスPublished - 2002 5月 15

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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