Photochemical vapor deposition of amorphous silica films using disilane and perfluorosilanes: Defect structures and deposition mechanism

Hidehiko Nonaka*, Kazuo Arai, Yoshiyuki Fujino, Shingo Ichimura

*この研究の対応する著者

研究成果: Article査読

20 被引用数 (Scopus)

抄録

Amorphous silicon dioxide films were deposited from oxygen, disilane (Si2H6), and perfluorosilanes (Si2F6 or SiF4) by photochemical vapor deposition using a deuterium lamp at a substrate temperature of as low as 200 °C. It was found that by mixing Si2F6, defects such as H and OH in the films were effectively removed with an enhancement in the growth rate and a slight doping of fluorine into the films, while SiF4 had no effect except a little doping of fluorine. The generation and extinction of defects including H, OH, and SiSi were investigated quantitatively by measuring infrared spectra and vacuum ultraviolet absorptions at the optical band edge. The model on the deposition process was proposed that photodissociated F-containing radicals eliminate H and activate the growing surface, resulting in enhancing the deposition rate.

本文言語English
ページ(範囲)4168-4174
ページ数7
ジャーナルJournal of Applied Physics
64
8
DOI
出版ステータスPublished - 1988 12 1
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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