Photodetector using surface-plasmon antenna for optical interconnect

Keishi Ohashi, Junichi Fujikata

研究成果: Conference contribution

3 引用 (Scopus)

抜粋

We used a surface-plasmon antenna to obtain small photodetectors for LSI on-chip optical interconnection by using near-field light generated by the antenna. Such near-field devices are not constrained by the diffraction limit and they offer an approach to integrated nanoscale photonic devices. A small semiconductor structure is located near the antenna to absorb the near-field light. This structure can be made as small as the Schottky depletion layer, so the separation between electrodes can be reduced to almost the size of the near-field region. We have demonstrated a "Si nano-photodiode" or plasmon photodiode that uses the near-field localized in a subwavelength region, which is usually relatively large in size because of the long absorption length for Si (∼10 μm at a wavelength of ∼800 nm). The Si nano-photodiode has a fast impulse response with a full-width at half-maximum of ∼20 ps even when the bias voltage is small (∼1 V or less). We demonstrated an on-chip optical interconnect chip to operate circuitry in an LSI chip by using waveguide-coupled Si nano-photodiodes.

元の言語English
ホスト出版物のタイトルApplications of Group IV Semiconductor Nanostructures
ページ21-32
ページ数12
出版物ステータスPublished - 2008 12 1
外部発表Yes
イベント2008 MRS Fall Meeting - Boston, MA, United States
継続期間: 2008 12 12008 12 5

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1145
ISSN(印刷物)0272-9172

Conference

Conference2008 MRS Fall Meeting
United States
Boston, MA
期間08/12/108/12/5

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • これを引用

    Ohashi, K., & Fujikata, J. (2008). Photodetector using surface-plasmon antenna for optical interconnect. : Applications of Group IV Semiconductor Nanostructures (pp. 21-32). (Materials Research Society Symposium Proceedings; 巻数 1145).