Photoemission spectroscopy of Ta 2NiSe 5

Y. Wakisaka; T. Sudayama; K. Takubo; T. Mizokawa; N. L. Saini; M. Arita; H. Namatame; M. Taniguchi; N. Katayama; M. Nohara; H. Takagi

doi:10.1007/s10948-012-1526-0

Photoemission spectroscopy of Ta ₂NiSe ₅

Y. Wakisaka^*, T. Sudayama, K. Takubo, T. Mizokawa, N. L. Saini, M. Arita, H. Namatame, M. Taniguchi, N. Katayama, M. Nohara, H. Takagi

^*この研究の対応する著者

研究成果 › 査読

63 被引用数 (Scopus)

抄録

We report temperature-dependent angle-resolved photoemission spectroscopy measurement of Ta ₂NiSe ₅ which shows a semiconductor- semiconductor structural phase transition at around 330 K. Characteristically, flat band at the top of the valence band is observed, which is ascribed to the excitonic insulator effect. The top valence band shifts to higher binding energy and its bandwidth increases as the temperature decreases. As the system exceeds the transition temperature, the flat feature of the valence band weakens though the exciton fluctuations remain finite.

本文言語	English
ページ（範囲）	1231-1234
ページ数	4
ジャーナル	Journal of Superconductivity and Novel Magnetism
巻	25
号	5
DOI	https://doi.org/10.1007/s10948-012-1526-0
出版ステータス	Published - 2012 7月
外部発表	はい

ASJC Scopus subject areas

電子材料、光学材料、および磁性材料
凝縮系物理学

文献へのアクセス

10.1007/s10948-012-1526-0

他のファイルとリンク

引用スタイル

@article{bec76f8d45e64aefb968cf12c6298b3a,

title = "Photoemission spectroscopy of Ta 2NiSe 5 ",

abstract = "We report temperature-dependent angle-resolved photoemission spectroscopy measurement of Ta 2NiSe 5 which shows a semiconductor- semiconductor structural phase transition at around 330 K. Characteristically, flat band at the top of the valence band is observed, which is ascribed to the excitonic insulator effect. The top valence band shifts to higher binding energy and its bandwidth increases as the temperature decreases. As the system exceeds the transition temperature, the flat feature of the valence band weakens though the exciton fluctuations remain finite.",

keywords = "Excitonic insulator, Layered chalcogenide, Photoemission",

author = "Y. Wakisaka and T. Sudayama and K. Takubo and T. Mizokawa and Saini, {N. L.} and M. Arita and H. Namatame and M. Taniguchi and N. Katayama and M. Nohara and H. Takagi",

note = "Funding Information: Acknowledgements This research is supported by the Grant-in-Aid for Scientific Research from the Japan Society for the Promotion of Science.",

year = "2012",

month = jul,

doi = "10.1007/s10948-012-1526-0",

language = "English",

volume = "25",

pages = "1231--1234",

journal = "Journal of Superconductivity and Novel Magnetism",

issn = "1557-1939",

publisher = "Springer New York",

number = "5",

}

TY - JOUR

T1 - Photoemission spectroscopy of Ta 2NiSe 5

AU - Wakisaka, Y.

AU - Sudayama, T.

AU - Takubo, K.

AU - Mizokawa, T.

AU - Saini, N. L.

AU - Arita, M.

AU - Namatame, H.

AU - Taniguchi, M.

AU - Katayama, N.

AU - Nohara, M.

AU - Takagi, H.

N1 - Funding Information: Acknowledgements This research is supported by the Grant-in-Aid for Scientific Research from the Japan Society for the Promotion of Science.

PY - 2012/7

Y1 - 2012/7

N2 - We report temperature-dependent angle-resolved photoemission spectroscopy measurement of Ta 2NiSe 5 which shows a semiconductor- semiconductor structural phase transition at around 330 K. Characteristically, flat band at the top of the valence band is observed, which is ascribed to the excitonic insulator effect. The top valence band shifts to higher binding energy and its bandwidth increases as the temperature decreases. As the system exceeds the transition temperature, the flat feature of the valence band weakens though the exciton fluctuations remain finite.

AB - We report temperature-dependent angle-resolved photoemission spectroscopy measurement of Ta 2NiSe 5 which shows a semiconductor- semiconductor structural phase transition at around 330 K. Characteristically, flat band at the top of the valence band is observed, which is ascribed to the excitonic insulator effect. The top valence band shifts to higher binding energy and its bandwidth increases as the temperature decreases. As the system exceeds the transition temperature, the flat feature of the valence band weakens though the exciton fluctuations remain finite.

KW - Excitonic insulator

KW - Layered chalcogenide

KW - Photoemission

UR - http://www.scopus.com/inward/record.url?scp=84864586637&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864586637&partnerID=8YFLogxK

U2 - 10.1007/s10948-012-1526-0

DO - 10.1007/s10948-012-1526-0

M3 - Article

AN - SCOPUS:84864586637

SN - 1557-1939

VL - 25

SP - 1231

EP - 1234

JO - Journal of Superconductivity and Novel Magnetism

JF - Journal of Superconductivity and Novel Magnetism

IS - 5

ER -