Photoluminescence and electron-spin-resonance studies of defects in amorphous SiO2 films

H. Nishikawa, H. Fukui, E. Watanabe, D. Ito, K. S. Seol, Y. Ohki

研究成果: Paper査読

抄録

The point defects in a-SiO2 films, including thermal a-SiO2 and those prepared by plasma enhanced chemical vapor deposition (PECVD) and separation by implantation of oxygen (SIMOX) techniques, are characterized. The results of photoluminescence and electron spin resonance (ESR) in thermal a-SiO2 films implanted with B+ or P+ ions are discussed. The photoluminescence decay characteristics were compared with those observed for other types of a-SiO2 prepared by the PECVD and SIMOX techniques.

本文言語English
ページ59-62
ページ数4
出版ステータスPublished - 1998 12 1
外部発表はい
イベントProceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn
継続期間: 1998 9 271998 9 30

Other

OtherProceedings of the 1998 International Symposium on Electrical Insulating Materials
CityToyohashi, Jpn
Period98/9/2798/9/30

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

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