The point defects in a-SiO2 films, including thermal a-SiO2 and those prepared by plasma enhanced chemical vapor deposition (PECVD) and separation by implantation of oxygen (SIMOX) techniques, are characterized. The results of photoluminescence and electron spin resonance (ESR) in thermal a-SiO2 films implanted with B+ or P+ ions are discussed. The photoluminescence decay characteristics were compared with those observed for other types of a-SiO2 prepared by the PECVD and SIMOX techniques.
|出版ステータス||Published - 1998 12 1|
|イベント||Proceedings of the 1998 International Symposium on Electrical Insulating Materials - Toyohashi, Jpn|
継続期間: 1998 9 27 → 1998 9 30
|Other||Proceedings of the 1998 International Symposium on Electrical Insulating Materials|
|Period||98/9/27 → 98/9/30|
ASJC Scopus subject areas
- Materials Science(all)