Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium

W. He, S. L. Lu, D. S. Jiang, J. R. Dong, Atsushi Tackeuchi, H. Yang

    研究成果: Article

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    Photoluminescence and Raman scattering measurements were performed on Si-doped GaInP grown on Ge. The deep broadband photoluminescence (PL) emission centered around 1.4 eV exhibits a strong dependence of strength on Si dopants, which is suggested to be due to [Ge (Ga,In)-V (Ga,In)] complexes. A strong evidence to support the existence of [Ge (Ga,In)- Si (Ga,In)] complexes in Si-doped GaInP is shown by Raman spectra. The blue shift of broad PL emission and the increased recombination life time with increased temperatures were explained by the competition between [Ge (Ga,In)-V (Ga,In)] and [Ge (Ga,In)-Si (Ga,In)] complexes.

    元の言語English
    記事番号023509
    ジャーナルJournal of Applied Physics
    112
    発行部数2
    DOI
    出版物ステータスPublished - 2012 7 15

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    germanium
    photoluminescence
    Raman spectra
    blue shift
    broadband
    life (durability)
    scattering
    temperature

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

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    Photoluminescence and Raman studies on Ge-based complexes in Si-doped GaInP epilayers grown on Germanium. / He, W.; Lu, S. L.; Jiang, D. S.; Dong, J. R.; Tackeuchi, Atsushi; Yang, H.

    :: Journal of Applied Physics, 巻 112, 番号 2, 023509, 15.07.2012.

    研究成果: Article

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    abstract = "Photoluminescence and Raman scattering measurements were performed on Si-doped GaInP grown on Ge. The deep broadband photoluminescence (PL) emission centered around 1.4 eV exhibits a strong dependence of strength on Si dopants, which is suggested to be due to [Ge (Ga,In)-V (Ga,In)] complexes. A strong evidence to support the existence of [Ge (Ga,In)- Si (Ga,In)] complexes in Si-doped GaInP is shown by Raman spectra. The blue shift of broad PL emission and the increased recombination life time with increased temperatures were explained by the competition between [Ge (Ga,In)-V (Ga,In)] and [Ge (Ga,In)-Si (Ga,In)] complexes.",
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    AU - He, W.

    AU - Lu, S. L.

    AU - Jiang, D. S.

    AU - Dong, J. R.

    AU - Tackeuchi, Atsushi

    AU - Yang, H.

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