Photoluminescence and Raman scattering measurements were performed on Si-doped GaInP grown on Ge. The deep broadband photoluminescence (PL) emission centered around 1.4 eV exhibits a strong dependence of strength on Si dopants, which is suggested to be due to [Ge (Ga,In)-V (Ga,In)] complexes. A strong evidence to support the existence of [Ge (Ga,In)- Si (Ga,In)] complexes in Si-doped GaInP is shown by Raman spectra. The blue shift of broad PL emission and the increased recombination life time with increased temperatures were explained by the competition between [Ge (Ga,In)-V (Ga,In)] and [Ge (Ga,In)-Si (Ga,In)] complexes.
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