Photoluminescence characteristics of amorphous slicon nitride nanoball film prevented from oxidizing in air

Tomoki Funatsu, Isamu Kato

研究成果: Article

抄録

Hydrogenated amorphous silicon (a-Si : H) nanoball film emits photoluminescence only after being thermally oxidized, because the oxidized film is sufficiently transparent that excitation laser light can reach Si nanocrystal. We fabricated amorphous silicon nitride (a-SiNH) nanoball film by reacting N 2 plasma and SiH4 gas. Without being thermally oxidized, this film was highly transparent and exhibited photoluminescence. The source of this photoluminescence is presumed to be either the quantum size effect of Si nanocrystal or electronic transitions in siloxane (Si-O-Si), which is present at the interface between Si nanocrystal and SiO 2. By coating the a-SiNH nanoball film with SiN film, we fabricated a-SiNH nanoball film that was siloxane-free but that exhibited photoluminescence. Hence, we attribute the observed photoluminescence to the quantum size effect of Si nanocrystal.

元の言語English
ページ(範囲)24-27
ページ数4
ジャーナルJournal of the Vacuum Society of Japan
55
発行部数1
DOI
出版物ステータスPublished - 2012

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Nitrides
nitrides
Photoluminescence
photoluminescence
air
Nanocrystals
Air
nanocrystals
Siloxanes
siloxanes
Amorphous silicon
amorphous silicon
Plasma Gases
Laser excitation
Silicon nitride
silicon nitrides
Plasmas
coatings
Coatings
Gases

ASJC Scopus subject areas

  • Spectroscopy
  • Materials Science(all)
  • Instrumentation
  • Surfaces and Interfaces

これを引用

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abstract = "Hydrogenated amorphous silicon (a-Si : H) nanoball film emits photoluminescence only after being thermally oxidized, because the oxidized film is sufficiently transparent that excitation laser light can reach Si nanocrystal. We fabricated amorphous silicon nitride (a-SiNH) nanoball film by reacting N 2 plasma and SiH4 gas. Without being thermally oxidized, this film was highly transparent and exhibited photoluminescence. The source of this photoluminescence is presumed to be either the quantum size effect of Si nanocrystal or electronic transitions in siloxane (Si-O-Si), which is present at the interface between Si nanocrystal and SiO 2. By coating the a-SiNH nanoball film with SiN film, we fabricated a-SiNH nanoball film that was siloxane-free but that exhibited photoluminescence. Hence, we attribute the observed photoluminescence to the quantum size effect of Si nanocrystal.",
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AB - Hydrogenated amorphous silicon (a-Si : H) nanoball film emits photoluminescence only after being thermally oxidized, because the oxidized film is sufficiently transparent that excitation laser light can reach Si nanocrystal. We fabricated amorphous silicon nitride (a-SiNH) nanoball film by reacting N 2 plasma and SiH4 gas. Without being thermally oxidized, this film was highly transparent and exhibited photoluminescence. The source of this photoluminescence is presumed to be either the quantum size effect of Si nanocrystal or electronic transitions in siloxane (Si-O-Si), which is present at the interface between Si nanocrystal and SiO 2. By coating the a-SiNH nanoball film with SiN film, we fabricated a-SiNH nanoball film that was siloxane-free but that exhibited photoluminescence. Hence, we attribute the observed photoluminescence to the quantum size effect of Si nanocrystal.

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