Photoluminescence characteristics of nitrogen atomic-layer-doped GaAs grown by MOVPE

Hisao Saito*, Toshiki Makimoto, Naoki Kobayashi

*この研究の対応する著者

研究成果: Article査読

32 被引用数 (Scopus)

抄録

Nitrogen atomic-layer-doped and uniformly doped GaAs were grown by MOVPE using dimethylhydrazine on a (001) plane. They showed several sharp photoluminescence lines with a full width at half maximum less than 1 meV at 8 K. Compared with uniformly doped GaAs, the photoluminescence intensity of the nitrogen-related line at the longest wavelength is enhanced in nitrogen atomic-layer-doped GaAs, suggesting that it is easier to form nitrogen pairs during atomic layer doping. To investigate the sharp nitrogen-related lines, we also grew GaAs with double atomic-layer-doped planes and varied the distance between the two planes. When the two planes are brought close to 1 nm, two new lines, NNC and NND, appear between the two nitrogen-related lines, NNA and NNB, observed in a single nitrogen atomic-layer-doped GaAs. The NNC and NND lines are also observed in uniformly doped GaAs. Therefore, NNA and NNB originate from excitons bound to pairs of nitrogen atoms, both of which are in the (001) plane, while NNC and NND originate from those bound to pairs of nitrogen atoms, of which pairing directions are not included in the (001) plane. From the photoluminescence characteristics, distances between nitrogen atoms of a pair are estimated for each line.

本文言語English
ページ(範囲)372-376
ページ数5
ジャーナルJournal of Crystal Growth
170
1-4
DOI
出版ステータスPublished - 1997 1月
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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