Photoluminescence from defect centers in high-purity silica glasses observed under 7.9-eV excitation

Hiroyuki Nishikawa, Taiji Shiroyama, Ryuta Nakamura, Yoshimichi Ohki, Kaya Nagasawa, Yoshimasa Hama

研究成果: Article

396 引用 (Scopus)

抜粋

Photoluminescence under 7.9-eV excimer-laser excitation was measured at room temperature on various types of high-purity silica glasses, which were classified based on the oxygen stoichiometry and OH concentrations. Several luminescence bands with different peak energies from 1.9 to 4.3 eV and decay constants were observed in different types of silicas. The 1.9-eV band was observed in low-OH oxygen-surplus and high-OH silicas. The 2.7-eV band was observed only in low-OH oxygen-deficient silicas. The 3.1- and the 4.2-eV bands were observed in a particular type of silica, which has a characteristic absorption band at 5.1 eV (referred to as the B2 band). The 4.3-eV band was observed in all types of silicas but the oxygen-surplus type. These results indicate that defects responsible for these luminescence bands are diamagnetic defects introduced during preparation or paramagnetic species induced during excitation.

元の言語English
ページ(範囲)586-591
ページ数6
ジャーナルPhysical Review B
45
発行部数2
DOI
出版物ステータスPublished - 1992 1 1

ASJC Scopus subject areas

  • Condensed Matter Physics

フィンガープリント Photoluminescence from defect centers in high-purity silica glasses observed under 7.9-eV excitation' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用