Photoluminescence from defect centers in high-purity silica glasses observed under 7.9-eV excitation

Hiroyuki Nishikawa, Taiji Shiroyama, Ryuta Nakamura, Yoshimichi Ohki, Kaya Nagasawa, Yoshimasa Hama

    研究成果: Article

    391 引用 (Scopus)

    抄録

    Photoluminescence under 7.9-eV excimer-laser excitation was measured at room temperature on various types of high-purity silica glasses, which were classified based on the oxygen stoichiometry and OH concentrations. Several luminescence bands with different peak energies from 1.9 to 4.3 eV and decay constants were observed in different types of silicas. The 1.9-eV band was observed in low-OH oxygen-surplus and high-OH silicas. The 2.7-eV band was observed only in low-OH oxygen-deficient silicas. The 3.1- and the 4.2-eV bands were observed in a particular type of silica, which has a characteristic absorption band at 5.1 eV (referred to as the B2 band). The 4.3-eV band was observed in all types of silicas but the oxygen-surplus type. These results indicate that defects responsible for these luminescence bands are diamagnetic defects introduced during preparation or paramagnetic species induced during excitation.

    元の言語English
    ページ(範囲)586-591
    ページ数6
    ジャーナルPhysical Review B
    45
    発行部数2
    DOI
    出版物ステータスPublished - 1992

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    silica glass
    Fused silica
    Silicon Dioxide
    Photoluminescence
    purity
    Silica
    photoluminescence
    Defects
    defects
    Oxygen
    silicon dioxide
    excitation
    Luminescence
    oxygen
    Laser excitation
    Excimer lasers
    luminescence
    Stoichiometry
    Absorption spectra
    excimer lasers

    ASJC Scopus subject areas

    • Condensed Matter Physics

    これを引用

    Photoluminescence from defect centers in high-purity silica glasses observed under 7.9-eV excitation. / Nishikawa, Hiroyuki; Shiroyama, Taiji; Nakamura, Ryuta; Ohki, Yoshimichi; Nagasawa, Kaya; Hama, Yoshimasa.

    :: Physical Review B, 巻 45, 番号 2, 1992, p. 586-591.

    研究成果: Article

    Nishikawa, Hiroyuki ; Shiroyama, Taiji ; Nakamura, Ryuta ; Ohki, Yoshimichi ; Nagasawa, Kaya ; Hama, Yoshimasa. / Photoluminescence from defect centers in high-purity silica glasses observed under 7.9-eV excitation. :: Physical Review B. 1992 ; 巻 45, 番号 2. pp. 586-591.
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    abstract = "Photoluminescence under 7.9-eV excimer-laser excitation was measured at room temperature on various types of high-purity silica glasses, which were classified based on the oxygen stoichiometry and OH concentrations. Several luminescence bands with different peak energies from 1.9 to 4.3 eV and decay constants were observed in different types of silicas. The 1.9-eV band was observed in low-OH oxygen-surplus and high-OH silicas. The 2.7-eV band was observed only in low-OH oxygen-deficient silicas. The 3.1- and the 4.2-eV bands were observed in a particular type of silica, which has a characteristic absorption band at 5.1 eV (referred to as the B2 band). The 4.3-eV band was observed in all types of silicas but the oxygen-surplus type. These results indicate that defects responsible for these luminescence bands are diamagnetic defects introduced during preparation or paramagnetic species induced during excitation.",
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    AU - Nishikawa, Hiroyuki

    AU - Shiroyama, Taiji

    AU - Nakamura, Ryuta

    AU - Ohki, Yoshimichi

    AU - Nagasawa, Kaya

    AU - Hama, Yoshimasa

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    N2 - Photoluminescence under 7.9-eV excimer-laser excitation was measured at room temperature on various types of high-purity silica glasses, which were classified based on the oxygen stoichiometry and OH concentrations. Several luminescence bands with different peak energies from 1.9 to 4.3 eV and decay constants were observed in different types of silicas. The 1.9-eV band was observed in low-OH oxygen-surplus and high-OH silicas. The 2.7-eV band was observed only in low-OH oxygen-deficient silicas. The 3.1- and the 4.2-eV bands were observed in a particular type of silica, which has a characteristic absorption band at 5.1 eV (referred to as the B2 band). The 4.3-eV band was observed in all types of silicas but the oxygen-surplus type. These results indicate that defects responsible for these luminescence bands are diamagnetic defects introduced during preparation or paramagnetic species induced during excitation.

    AB - Photoluminescence under 7.9-eV excimer-laser excitation was measured at room temperature on various types of high-purity silica glasses, which were classified based on the oxygen stoichiometry and OH concentrations. Several luminescence bands with different peak energies from 1.9 to 4.3 eV and decay constants were observed in different types of silicas. The 1.9-eV band was observed in low-OH oxygen-surplus and high-OH silicas. The 2.7-eV band was observed only in low-OH oxygen-deficient silicas. The 3.1- and the 4.2-eV bands were observed in a particular type of silica, which has a characteristic absorption band at 5.1 eV (referred to as the B2 band). The 4.3-eV band was observed in all types of silicas but the oxygen-surplus type. These results indicate that defects responsible for these luminescence bands are diamagnetic defects introduced during preparation or paramagnetic species induced during excitation.

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