Photoluminescence in polysilane alloys

N. Matsumoto*, S. Furukawa, K. Takeda

*この研究の対応する著者

研究成果: Article査読

17 被引用数 (Scopus)

抄録

Polysilane alloys are prepared by the rf glow discharge of disilane. The microscopic structure, which depends on substrate temperature, is discussed by measuring the infrared absorption spectrum and dangling bond density. Temperature dependence of the photoluminescence of polysilane alloys is measured and compared with that of conventional a-Si:H film. Based on the microscopic structure and calculated energy level for polysilane molecules, a three dimensional quantum well model is proposed for the band structure of polysilane alloys. This model is consistent with photoluminescence and related optical properties.

本文言語English
ページ(範囲)881-884
ページ数4
ジャーナルSolid State Communications
53
10
DOI
出版ステータスPublished - 1985 3
外部発表はい

ASJC Scopus subject areas

  • 化学 (全般)
  • 凝縮系物理学
  • 材料化学

フィンガープリント

「Photoluminescence in polysilane alloys」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル