TY - JOUR
T1 - Photoluminescence of oxygen-deficient-type defects in a-SiO2
AU - Nishikawa, N.
AU - Miyake, Y.
AU - Watanabe, E.
AU - Ito, D.
AU - Seol, K. S.
AU - Ohki, Y.
AU - Ishii, K.
AU - Sakurai, Y.
AU - Nagasawa, K.
N1 - Funding Information:
This work is partly supportedb y Grants-in-Aid from the Tokyo Metropolitan University, the Japanese Ministry of Education, Science, and Culture (No. 07805033)M, urata Science Promotion Foundation,S aneyoshiS cholarshipF ounda-tion, and by the Joint StudiesP rogram( 1995-1996) of the Institute for Molecular Science,U VSOR.
PY - 1997/12/11
Y1 - 1997/12/11
N2 - Oxygen-deficient-type defects in a-SiO2 were studied by means of photoluminescence (PL) measurements. Various properties of the 4.4-eV PL such as the decay lifetime and the temperature dependence in oxygen-deficient-type a-SiO2 can be explained in terms of an energy diagram involving two configurations of the oxygen-deficient-type defect. The 4.4-eV PL observed from the ion-implanted thermal oxides and the oxides prepared by the plasma-enhanced CVD method, has a stretched-exponential decay, suggesting a large structural distribution in the local network structures. A PL band at ∼ 1.8 eV associated with highly oxygen-deficit states is also observed in oxygen-deficient-type a-SiO2 after high-dose γ-irradiation (dose: 10 MGy).
AB - Oxygen-deficient-type defects in a-SiO2 were studied by means of photoluminescence (PL) measurements. Various properties of the 4.4-eV PL such as the decay lifetime and the temperature dependence in oxygen-deficient-type a-SiO2 can be explained in terms of an energy diagram involving two configurations of the oxygen-deficient-type defect. The 4.4-eV PL observed from the ion-implanted thermal oxides and the oxides prepared by the plasma-enhanced CVD method, has a stretched-exponential decay, suggesting a large structural distribution in the local network structures. A PL band at ∼ 1.8 eV associated with highly oxygen-deficit states is also observed in oxygen-deficient-type a-SiO2 after high-dose γ-irradiation (dose: 10 MGy).
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U2 - 10.1016/s0022-3093(97)90117-4
DO - 10.1016/s0022-3093(97)90117-4
M3 - Article
AN - SCOPUS:85084624936
VL - 222
SP - 221
EP - 227
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
SN - 0022-3093
ER -