We have investigated the annealing-temperature dependence on photoluminescence (PL) properties of InAs quantum dots (QDs) fabricated on GaAs substrate. The annealing temperatures were varied from 700 to 1000°C. The observed PL spectra were drastically changed by changing the annealing temperature. The PL peaking-wavelength of non-annealed sample is around 1200 nm. However, the peaking-wavelength is drastically blue-shifted with increasing annealing temperature. The strongest PL intensity is observed from the sample annealed at 875°C. This PL intensity is more than seven fold compared with that of the non-annealed sample.
|ジャーナル||Physica Status Solidi (C) Current Topics in Solid State Physics|
|出版ステータス||Published - 2009|
|イベント||8th International Conference on Excitonic Processes in Condensed Matter, EXCON'08 - Kyoto, Japan|
継続期間: 2008 6月 22 → 2008 6月 27
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