Photoluminescence properties of hydrogenated amorphous silicon nitride

Norihide Kashio*, Hiromitsu Kato, Yoshimichi Ohki, Kwang Soo Seol, Takashi Noma

*この研究の対応する著者

研究成果: Paper査読

2 被引用数 (Scopus)

抄録

The photoluminescence (PL) in silicon-rich a-SiNx:H films was studied. It was found that the PL energy shifts to a higher energy as x increases. Time-resolved PL and nanosecond-order PL decay measurements indicate that the photogenerated carriers in the band-tail states recombine first through an exciton-like mechanism and then through a radiative tunneling mechanism as in the cases of near-stoichiometric and nitrogen-rich a-SiNx:H films.

Conference

ConferenceProceedings of 2001 International Symp. on Electrical Insulating Materials (ISEIM 2001) / 2001 Asian Conf. on Electrical Insulation Diagnosis (ACEID 2001) / 33rd Symp. on Electrical and Electronic Insulating Materials and Applications in Systems
国/地域Japan
CityHimeji
Period01/11/1901/11/22

ASJC Scopus subject areas

  • 工学(全般)
  • 材料科学(全般)

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