Photoluminescence study of beryllium implantation induced intrinsic defects in 6H-silicon carbide

S. Fung*, X. D. Chen, C. D. Beling, Y. Huang, Q. Li, S. J. Xu, M. Gong, T. Henkel, H. Tanoue, Naoto Kobayashi

*この研究の対応する著者

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Beryllium was implanted into both n- and p-type 6H-SiC and the samples were subsequently annealed at 1600°C. Photoluminescence (PL) measurements were performed and PL lines at 420 and 472nm were observed. The PL lines at around 420nm have been detected from various ion implanted SiC samples and have been attributed to transitions involving some implantation induced intrinsic defect labeled as DII. The present observation of the PL lines at 420nm from Be implanted 6H-SiC supports the intrinsic model that DII might be a carbon-di-interstitial defect. The lines at 472nm labeled as DI in the PL spectra have previously been identified as divacancy defect (VSi-VC). We note that it was suggested that the electron traps labeled Z1/Z2 observed in deep level transient spectroscopy (DLTS) were due to the same divacancy defect. In our experiments, while the DI series PL lines are prominent, DLTS results from the same samples show no Z1/Z2 related peaks. The PL and DLTS results seem to be against the possibility that Z1/Z2 arise from the same defect.

本文言語English
ページ(範囲)710-713
ページ数4
ジャーナルPhysica B: Condensed Matter
308-310
DOI
出版ステータスPublished - 2001 12
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学

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