Photoluminescence study of defects in ion-implanted thermal SiO2 films

Hiroyuki Nishikawa*, Eiki Watanabe, Daisuke Ito, Makoto Takiyama, Akihito Ieki, Yoshimichi Ohki

*この研究の対応する著者

研究成果: Article査読

79 被引用数 (Scopus)

抄録

Photoluminescence (PL) study was performed on B or P ion-implanted thermal SiO2 films. Two PL bands at 4.3 and 2.6 eV were observed. For the 4.3 eV bands, two PL excitation (PLE) bands were observed at 5.0 and 7.4 eV. Based on the close similarities of the PL and PLE bands to those observed in oxygen-deficient-type bulk silica, the 4.3 and 2.6 eV PL bands are ascribed to the oxygen-deficient-type defects induced by ion implantation. While the 4.3 eV PL band in the bulk SiO2 decays exponentially, the decay of the corresponding PL band in the implanted thermal SiO2 films follows a power low or stretched exponential, suggesting the distribution of PL lifetimes. This suggests that the oxygen-deficient-type defects induced by the ion implantation in thermal SiO2 films are perturbed by the structural distribution of the surrounding Si-O-Si network, including the concentration of PL quenching centers.

本文言語English
ページ(範囲)842-846
ページ数5
ジャーナルJournal of Applied Physics
78
2
DOI
出版ステータスPublished - 1995 12 1

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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