Photoluminescence study on point defects in SIMOX buried SiO2 film

K. S. Seol, A. Ieki, Y. Ohki, H. Nishikawa, M. Tachimori

研究成果: Conference article

抜粋

Defects in buried SiO2 films in Si formed by implantation of oxygen ions (SIMOX) were characterized by photoluminescence (PL) excited by KrF excimer laser (5.0 eV) and synchrotron radiation. Two PL bands were observed at 4.3 eV and 2.7 eV. The 4.3 eV band has two PL excitation bands at 5.0 eV and 7.4 eV, and its decay time is 4.0 ns for the 5.0 eV excitation and 2.4 ns for the 7.4 eV excitation. The decay time of the 2.7 eV PL band is found to be 9.7 ms. These results are very similar to those for the 4.3 eV and the 2.7 eV PL bands, which are observed in bulk silica glass of an oxygen-deficient type and attributed to the oxygen vacancy.

元の言語English
ページ(範囲)1909-1914
ページ数6
ジャーナルMaterials Science Forum
196-201
発行部数pt 4
出版物ステータスPublished - 1995 12 1
イベントProceedings of the 1995 18th International Conference on Defects in Semiconductors, ICDS-18. Part 1 (of 4) - Sendai, Jpn
継続期間: 1995 7 231995 7 28

    フィンガープリント

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Seol, K. S., Ieki, A., Ohki, Y., Nishikawa, H., & Tachimori, M. (1995). Photoluminescence study on point defects in SIMOX buried SiO2 film. Materials Science Forum, 196-201(pt 4), 1909-1914.