Photonic integrated device of highly-stacked quantum dot using quantum dot intermixing by ion implantation

S. Matsui, Y. Takei, A. Matsumoto, K. Akahane, Y. Matsushima, H. Ishikawa, K. Utaka

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

We studied the photonic integrated device of highly-stacked quantum dot (QD) on InP(311)B substrates using quantum dot intermixing (QDI) technique. A photoluminescence (PL) spectral blue-shift by about 190 nm was observed for the QDI process with B+ implantation and rapid thermal annealing (RTA) at 620°C. A QD laser integrated with two micro-ring-resonators (MRRs) was successfully fabricated with the QDI technique to show a large output of >20mW and a wavelength selective characteristic associated with MRRs.

本文言語English
ホスト出版物のタイトル2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781509019649
DOI
出版ステータスPublished - 2016 8 1
イベント2016 Compound Semiconductor Week, CSW 2016 - Toyama, Japan
継続期間: 2016 6 262016 6 30

出版物シリーズ

名前2016 Compound Semiconductor Week, CSW 2016 - Includes 28th International Conference on Indium Phosphide and Related Materials, IPRM and 43rd International Symposium on Compound Semiconductors, ISCS 2016

Other

Other2016 Compound Semiconductor Week, CSW 2016
国/地域Japan
CityToyama
Period16/6/2616/6/30

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

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