Photoreduction Dependent p- and n-Type Semiconducting Field-Effect Transistor Properties in Undoped Reduced Graphene Oxide

Hiroshi Takehira, Md Saidul Islam, Mohammad Razaul Karim, Yuta Shudo, Ryo Ohtani, Leonard F. Lindoy, Takaaki Taniguchi, Minoru Osada, Shinya Hayami*

*この研究の対応する著者

    研究成果: Article査読

    7 被引用数 (Scopus)

    抄録

    Both p- and n-type field effect transistors (FET) properties have been observed in undoped reduced graphene oxide (rGO). Short and long time exposure of GO during photo reduction results in the formation of respective p- and n-type rGO semiconductor. Achieving duel behavior of this type in an undoped material is exceedingly unusual. Herein we report the presence of such behavior in the reduced from of graphene oxide (rGO) for the first time.

    本文言語English
    ページ(範囲)6941-6944
    ページ数4
    ジャーナルChemistrySelect
    2
    24
    DOI
    出版ステータスPublished - 2017 1月 1

    ASJC Scopus subject areas

    • 化学 (全般)

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